| PART |
Description |
Maker |
| MDS1100 |
a high power COMMON BASE bipolar transistor.
|
Microsemi Corporation
|
| DME500 |
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz high power COMMON BASE bipolar transistor.
|
GHz Technology
|
| 2SC4246 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)
|
TOSHIBA
|
| 2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)
|
TOSHIBA
|
| BF414 Q62702-F517 |
From old datasheet system
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages)
NPN Silicon RF Transistor (For low-noise/ common base VHF and FM stages)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| VCMB8111-RC |
Common Mode Choke with Base
|
Allied Components Inter...
|
| SAA1064TD-T SAA1064TD SAA1064PN SAA1064N |
LED DISPLAY DRIVER,7-SEGMENT,COMMON-ANODE,BIPOLAR,SOP,24PIN,PLASTIC
LED DISPLAY DRIVER,7-SEGMENT,COMMON-ANODE,BIPOLAR,DIP,24PIN,PLASTIC
From old datasheet system
|
Philips Semiconductors
|
| 0912-45-3 0912-45-2 |
45 W, 50 V internally matched, common base transistor
|
Acrian
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| BUL50A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
TT electronics Semelab Limited
|
